LME - Publicaciones

Low-power temperature-independent CMOS measurement circuits for resistive gas sensors (+)
International Journal Of Circuit Theory And Applications: John Wiley & Sons Ltd, ISSN: 0098-9886, 2023
Autores/as: Goyret, J. P.; Cassani, M. V.; Carbonetto, S. H. y Garcia-Inza, M. A.

Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current (+)
Microelectronics Reliability, Volume 137, 114752, ISSN 0026-2714, 2022
Autores/as: García Cozzi, R.; Redín, E.; Garcia-Inza, M.; Sambuco Salomone, L.; Faigón, A. y Carbonetto, S.

Modeling switched bias irradiations on floating gate devices: Application to dosimetry
IEEE Transactions on Nuclear Science, vol. 69, no. 6, pp. 1229-1235, 2022.
Autores/as: Sambuco Salomone, L.; Garcia-Inza, M.; Carbonetto, S.; Lipovetzky, J.; Redin, E. y Faigón, A.

Numerical modeling of radiation-induced charge neutralization in MOS devices (+)
Radiation Measurements - Elsevier, Volume 153, 106745, 2022
Autores/as: Sambuco Salomone, L.; Garcia-Inza, M.; Carbonetto, S.; Lipovetzky, J. Redin, E. y Faigón, A.

Numerical modeling of radiation-induced charge loss in CMOS floating gate cells
Elektron, Vol. 5, no. 2, pp. 100-104, 2021.
Autores/as: Sambuco Salomone, L.; Garcia-Inza, M. Carbonetto, S. y Faigón, A.

Neutron-gamma dosimetry for BNCT using field oxide transistors with gadolinium oxide as neutron converter layer (+)
Med Phys, 2021
Autores/as: Gimenez, M.; Lipovetzky, J.; Bessia, F.; Longhino, J.; Tartaglione, A..; Garcia-Inza, M.; Blostein, J.; Carbonetto, S.; Berisso, M.; Pérez, M.; Sidelnik, I.; Redin, E. y Faigón, A.

Experimental characterization and numerical modeling of total ionizing dose effects on field oxide MOS dosimeters (+)
Radiation Physics and Chemistry - Elsevier, ISSN 0969-806X, 2021 Autores/as: Cassani, M. V.; Sambuco Salomone, L.; Carbonetto, S.; Faigón, A.; Redin, E.; Garcia-Inza, M.

Multibit-RRAM readout circuits based on non-balanced inverters (+)
Elsevier Microelectronics Journal, ISSN 0026-2692, 2021
Autores/as: Sanca, G. A.; García-Inza, M. y Golmar, F.

Temperature-compensated MOS dosimeter fully integrated in a high-voltage 0.35 µm CMOS process
In IEEE Transactions on Nuclear Science, 2020 Autores/as: Carbonetto, S.; Echarri, M.; Lipovetzky, J.; Garcia–Inza, M. y Faigon, A.

Studying ReRAM devices at Low Earth Orbits using the LabOSat platform (+)
Radiation Physics and Chemistry, 2019
Autores/as: Barella, M.; Sanca, G.; Gómez Marlasca, F. ; Román Acevedo, W.; Rubi, D.; Garcia Inza, M.; Levy, P. y Golmar, F.

6MV LINAC characterization of a MOSFET dosimeter fabricated in a CMOS process (+)
Elsevier Radiation Measurements, ISSN 1350-4487, Volume 117, pp 63-69, 2018
Autores/as: Garcia-Inza, M.; Cassani, M.; Carbonetto, S.; Casal, M.; Redín, E. y Faigón, A.